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    DSAEDA000122997.pdf

    • IXYS
    • Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFN320N17T2 = = 170V 260A 5.2mΩ Ω 150ns RDS(on) ≤ ≤ trr N-Channel Enhancement M
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