DSA0096237.pdf
- Toshiba
- TOSHIBA TIM5053-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 39 dBm at 5.0 GHz to 5.3 GHz · High gain - G1dB = 9.0 dB at 5.0 GHz to 5
- Original
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