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DSA00307598.pdf
Manufacturer
Hynix Semiconductor
Partial File Text
HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications
Type
Original
ECAD Model
Part Details
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HY57V161610E
HY57V161610ETP-10I
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HY57V161610ETP-5I
HY57V161610ETP-6I
HY57V161610ETP-7I
HY57V161610ETP-8I
HY57V161610ETP-I