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    DSASW00201765.pdf

    • Infineon Technologies
    • Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 ­ 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecon
    • Original
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    DSASW00201765.pdf preview Download Datasheet

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