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    DSA00307079.pdf

    • Hitachi Semiconductor
    • 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP­12 High speed power switching Features 1 · Low on­resistance N Channel : RDS(on) 0.17, VGS = 10V , ID = 4A P
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    DSA00307079.pdf preview Download Datasheet

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    2SJ172 2SK970 4AM16

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