DSA2IH00100616.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> p^V Ï-ïs» -il §e,fr>6 0 aï * m eV "' M G FC 40V 3742A 3 .7 ~ 4 .2 G H r BAND ÎO W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 3 7 4 2 A i
Type Scan
ECAD Model

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