DSA00261325.pdf
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Fujitsu
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FLX257XV
GaAs FET & HEMT Chips
FEATURES
· · · · High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability
95
40
(Unit: µm)
DESC
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Original
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