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DSAHI000132052.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Ele
Datasheet Type
Original
ECAD Model
Part Details
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tc58nvg2s
TC58NVG2S3
TC58NVG2S3E
TC58NVG2S3EB
TC58NVG2S3EBAI5
Toshiba confidential NAND
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