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    DSACRA00007856.pdf

    • Mitsubishi
    • < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
    • Original
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    DSACRA00007856.pdf preview Download Datasheet

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    GD-32 low noise Micro-X marking "K" MGF4941CL RO4350B RO4350B max current RO4350B ROGERS transistor "micro-x" "marking" 3

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