DSAIH00053699.pdf

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Partial File Text INTL. MICROCIRCUITS INC 73 Î )Ë J 4 0 5 0 4 1 6 0 0 0 0 2 5 5 1 fl~T-42-ll-09 PR O D U C T FEATURES 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metal ization Fully autorou
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