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DSAIHSC000104219.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features ⢠Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Sing
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ECAD Model
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