DSAZIHA100024559.pdf
- American Microsemiconductor
- 2N6467 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m°
- Original
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