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Scans-0031578.pdf
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â RDOHIES 0000030 ITA â HTM HITTITE MICROWAVE CORPORATION JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER GaAs
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ECAD Model
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2 Watt rf Amplifier
DC bias of gaas FET
HMC138
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