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    Scans-0031578.pdf

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    • ■ RDOHIES 0000030 ITA ■HTM HITTITE MICROWAVE CORPORATION JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER GaAs
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    2 Watt rf Amplifier DC bias of gaas FET HMC138
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