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DSA2IH00127744.pdf
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PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 \im (recessed gate) GATE WIDTH: Wg
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ECAD Model
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817 CN
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