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DSAIHSC000133158.pdf
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FLC151XP Füjrrsu GaAs FET and HEMT Chips FEATURES ⢠⢠⢠⢠High Output Power: P-|<jB = 31.5dBm (Typ.) High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Rel
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