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    DSA00321807.pdf

    • Infineon Technologies
    • PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ­ 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS ® FETs intended for EDG
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