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DSAIHSC00028363.pdf
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MwT-9 Ãà kWiü 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r 1 6 7 +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY
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ECAD Model
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