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Scans-0078149.pdf
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IRFR010/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS FEATURES ⢠Lower Rds (on) ⢠Improved inductive ruggedness ⢠Fast switching times ⢠Rugged poiysilicon gate cell structure
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ECAD Model
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IRFr010