DSA2IH0074249.pdf

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Partial File Text Ultra-Low VC E (s a t) IGBT with Diode IXGH 38N60U1 V CES v ^C25 CE(sat) = 600 V = 76 A = 1.8V Symbol VC E S VC G B VGES v GEM ^ C 2 5 ^ C 9 0 ' cm Test Conditions ^ = 25°C to 15
Type Scan
ECAD Model

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