DSAZIHA100018502.pdf
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American Microsemiconductor
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NKT252 Transistors
Ge PNP Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)12â
V(BR)CBO (V)12
I(C) Max. (A)25m
Absolute Max. Power Diss. (W)180m
Maximum Operating Temp (øC)100õ
I(CBO) Max. (A)5.0u
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Original
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