DSAZIHA100021926.pdf
- American Microsemiconductor
- BUZ900P Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width
- Original
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