DSAH00419882.pdf
- OSRAM
- SI-FOTODETEKTOREN 4. Fototransistoren TA = 25 °C Package Type Radiant sensitive area SILICON PHOTODETECTORS 4. Phototransistors TA = 25 °C IPCE ( = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V) mA 10%
- Original
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