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DSA00228393.pdf
Manufacturer
ON Semiconductor
Partial File Text
NGB8206N Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for
Type
Original
ECAD Model
Part Details
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NGB8206N
NGB8206NT4