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    DSAZIHA100019908.pdf

    • American Microsemiconductor
    • BC557VI Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nÃ
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