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    DSA00589355.pdf

    • Renesas Electronics
    • Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current
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