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    DSAH00266535.pdf

    • M/A-COM
    • RF Power Field Effect Transistor LDMOS, 1900 -- 2000 MHz, 30W, 26V 2/18/03 Preliminary MAPLST1920-030WF Features Designed for GSM and EDGE base station applications in the 1.9 to 2.0 GHz
    • Original
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