DSAISS00031479.pdf
-
International Rectifier
-
IRFH5306PbF
HEXFET® Power MOSFET
V DS
30
V
R DS(on) max
8.1
mâ¦
Qg (typical)
7.8
nC
R G (typical)
1.4
â¦
ID
44
A
(@VGS = 10V)
(@Tc(Bottom) = 25°C)
-
Original
-
-
-
Part pricing, stock, data attributes from Findchips.com