DSAEDA00038568.pdf
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Fairchild Semiconductor
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FDC8886
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
General Description
Ì Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
This N-Channel MOSFET is produced using Fairchild
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Original
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