DSAZIHA100021929.pdf
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American Microsemiconductor
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BUZ901P Transistors
N-Channel Enhancement MOSFET
Military/High-RelN
V(BR)DSS (V)200
V(BR)GSS (V)
I(D) Max. (A)8.0#
I(DM) Max. (A) Pulsed I(D)
@Temp (øC)
IDM Max (@25øC Amb)8.0#
@Pulse Width
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Original
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