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DSAZIHA1000279563.pdf
Manufacturer
Cree
Partial File Text
PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Creeâs CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high effic
Type
Original
ECAD Model
Part Details
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