DSA2IH0062211.pdf

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Partial File Text 3 3 HARRIS August 1991 RFP4N100 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Package T O -2 2 0 A B T O P V IE W Features · 4.3A, 1000V · rDS(on) = 3 .5 0 · UIS
Type Scan
Alternative Parts
MTB3N100E MTB3N100E

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