The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSAIHSC000104752.pdf
Manufacturer
Not Available
Partial File Text
TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features ⢠High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz ⢠High gain - G idB = 8.5 dB at 5.3 GH
Datasheet Type
Scan
ECAD Model
DSAIHSC000104752.pdf preview
Download Datasheet