DSAIH000129665.pdf

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Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES : HIGH POWER PidB 42.0 dBm at 9.5 G H z to 10.5 GHz HIG H GAIN G 1dB = 7.0 dB at 9.5 G H z to 10.5 G Hz
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