DSA0096104.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz · High gain - G1dB = 6.0 dB at 12.
Datasheet Type Original
ECAD Model
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