DSA0096102.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz · High gain - G1dB = 5.0 dB at 11.7
Type Original
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DSA0096102.pdf preview Download Datasheet