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    DSA00514080.pdf

    • Cree
    • UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2
    • Original
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    DSA00514080.pdf preview Download Datasheet

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    Cree Microwave UGF21060 UGF21060F UGF21060P

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