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DSA2IH00163518.pdf
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KM6466A/KM6466AL 1 6 K x 4 Bit S tatic R A M (with OE) CMOS SRAM FEATURES · Fast Access Time: 25,35,45 ns (max.) · Low Power Dissipation Standby (TTL): 30mA (max.) (CMOS): 2mA (max.) 100nA (ma
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samsung 201
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