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    DSA00108914.pdf

    • Toshiba
    • 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V Complementary to 2SJ618
    • Original
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    DSA00108914.pdf preview Download Datasheet

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