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DSAUD0048991.pdf
Manufacturer
Toshiba
Partial File Text
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admitta
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
2SJ200
2SK1529
Toshiba 2SJ
transistor application