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    DSAEDA00012700.pdf

    • Mitsubishi
    • < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. T
    • Original
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    DSAEDA00012700.pdf preview Download Datasheet

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