DSA00207609.pdf
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Eudyna Devices
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FSU02LG
General Purpose GaAs FET FEATURES
· High Output Power: P1dB = 23.0dBm (Typ.)@2GHz · High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz · Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz · Low Bias Cond
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Original
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