DSAISS00031367.pdf
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International Rectifier
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IRFH5207PbF
HEXFET® Power MOSFET
VDS
75
V
RDS(on) max
9.6
mΩ
Qg (typical)
40
nC
RG (typical)
1.7
Ω
71
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
PQFN
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Original
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