DSAIH000133145.pdf

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Partial File Text T O S H IB A MICROW AVE SEM ICO NDUCTO R MICROWAVE POWER G aAs FET TECHNICAL DATA FEATURES : HIGH POWER P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz HIGH GAIN G1dB = 6.0 dB at 14.0 GHz to 14.5 G
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DSAIH000133145.pdf preview Download Datasheet