DSA00319645.pdf

Manufacturer Infineon Technologies
Partial File Text BFP650 NPN Silicon Germanium RF Transistor Preliminary data · For high power amplifiers · Ideal for low phase noise oscilators · Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.8 dB a
Type Original
ECAD Model
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