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DASF0044023.pdf
Manufacturer
Toshiba
Partial File Text
GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications · Third-generation IGBT · Enhancement mode type · High speed
Datasheet Type
Original
ECAD Model
Part Details
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GT10Q101
GT10Q301
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