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DSAUD009671.pdf
Manufacturer
Toshiba
Partial File Text
TC58DVM92A3TA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT (64 M × 8 BITS) CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128
Type
Original
ECAD Model
Part Details
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TC58DVM92A3
TC58DVM92A3TA00