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    • SAMSUNG ELECTRONICS INC fc^E D ■ 7^4142 DDlSSTi T77 IRF9Z34/Z35 P-CHANNEL IRF9Z30/Z32 POWER MOSFETS FEATURES • Lower Rds (on) • Improved inductive ruggedness • Fast switching times â€
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    DIODE Z32 IRf 444 IRf 444 MOSFET IRF high current p-channel irf P-CHANNEL IRF z34 MOSFET IRF9Z30 IRF9Z32 irf9z34 irf9z34 mosfet IRF9Z35 P-channel power mosfet irf
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