DSAZIHA100021320.pdf
- American Microsemiconductor
- MEB30C6 Thyristors Half-Controlled Bridge (Thyristor) V(RRM) Max. (V) V(DRM) Max. (V)600 I(T) Rated Maximum (A)30 @Temp. (øC) (Test Condition)76 I(TSM) Max. (A)250 @ t(w) (s) (Test Condition)
- Original
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