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    DSAEDA000122852.pdf

    • IXYS
    • Advance Technical Information TrenchMVTM Power MOSFET IXTF280N055T VDSS ID25 = 55 V = 160 A Ω ≤ 4.0 mΩ RDS(on) (Electrically Isolated Back Surface) N-Channel Enhancemen
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