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    Scans-00151827.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs (Chip Form) Features • High power - P1dB = 24dBmatf = 15 GHz • High gain - G1dB = 8dBatf= 15 GHz • Suitable for Ku-Band amp
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    JS8851-AS MW1011

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